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レーザーダイオード (LD)

紫外~赤色の波長帯をラインアップ

産業分野をはじめ、民生、車載など、幅広い分野に対応

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NICHIAレーザーダイオード(LD)の特徴

幅広い発振波長

NICHIAのレーザーダイオードは、UV領域から可視光(青色～緑色～赤色域)まで幅広い発振波長を展開しています。プロジェクターなどの民生品や、露光機、内視鏡、レーザー加工などの産業用製品、ヘッドライトや車載用プロジェクションなどの車載製品に至るまで、多様な用途で活躍しており、今後もさらに多くの用途への応用展開が期待されています。高性能・高信頼のNICHIAの技術は、国内外で高く評価されています。

世界トップクラスのレーザーダイオード

NICHIAのレーザーダイオードは、世界トップクラスの品質と出力を誇ります。安定した発振性能と優れた耐久性により、産業用途、医療用途、車載用途など、高負荷環境下でも高い信頼性を発揮します。世界最高レベルの高輝度・高効率な青色レーザーで銅材の高速溶接を可能にするなど、さまざまな分野で新たな可能性を切り拓いています。

小型パッケージ

NICHIAはパッケージ開発にも注力し、小型化・高集積化・低コスト化を追求しています。これにより、プロジェクター、照明、産業、車載、医療など、幅広い用途への展開を加速させ、新たな技術の実現にもつながっています。さらに、レーザーダイオードのパッケージをUV LEDに応用するなど、NICHIA独自の新たな開発も進めています。

一貫生産による高品質RGBレーザー

NICHIAは、赤・緑・青（RGB）3原色すべての半導体レーザーチップを自社で一貫して製造できる独自の生産体制を確立しています。最先端のレーザー発振器や加工評価設備を活用し、QCD（品質・コスト・供給）に優れた製品で、多様化するお客様のニーズに柔軟かつ丁寧に対応いたします。
RGBの複数のLDチップを1つの小型パッケージに高密度実装したレーザー製品「QuaLas™ RGB」は、多くのプロジェクターにご採用いただいており、プロジェクターの小型化・高画質化・高輝度化に貢献しています。

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LEDとLDの違い　指向性・集光性・単色性・光出力の線形性

LEDは光を広範囲に拡散して照射するのに対し、レーザーダイオード(LD)はビームの放射⾓が狭く、発光面積も小さいため、集光性に優れます。LDの光密度はLEDの100～1,000倍以上に達します。さらに、LDはスペクトル幅が狭く単色性に優れており、高い色再現性を有します。また、光出力の線形性にも優れており、LEDと比べて高い電流領域でも安定して高出力を維持できます。

環境に優しい次世代光源

レーザーダイオード(LD)は、水銀ランプの代替光源として、製造工程での露光用途やプロジェクション用途など、さまざまな分野で活用されています。LDへ置き換えることで、水銀廃棄時の環境負荷の課題を解決できるだけでなく、高い省エネルギー性能により消費電力やCO₂排出量の削減にも貢献します。さらに、超高圧水銀ランプの寿命が3,000～6,000時間であるのに対し、LDは約20,000時間と長寿命であり、交換やメンテナンスの頻度を大幅に減らすことができます。これにより、運用コストや廃棄物も削減することが可能です。

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古河電工×日亜化学青色レーザモジュール共同開発対談（後編）<br>
共同ラボ「CELL」設立と“当たり前”の共同作業が築く未来（古河電工ウェブサイトへ）

2026-01-23

古河電工×日亜化学青色レーザモジュール共同開発対談（後編）
共同ラボ「CELL」設立と“当たり前”の共同作業が築く未来（古河電工ウェブサイトへ）

古河電工×日亜化学青色レーザモジュール共同開発対談（前編）<br>
技術による対話で境界線を越える。「オールジャパン」で世界一へ（古河電工ウェブサイトへ）

2026-01-23

古河電工×日亜化学青色レーザモジュール共同開発対談（前編）
技術による対話で境界線を越える。「オールジャパン」で世界一へ（古河電工ウェブサイトへ）

2025-04-08

レーザー光源ロゴの新規作成について

2025-04-08

RGB3色レーザー光源を搭載した「OctoLas™(オクトラス)」、「QuaLas™(クオラス)」が、 TVS REGZA 4Kレグザレーザープロジェクターに採用されました

2024-11-27

愛知県刈谷市にレーザ加工ソリューションラボを開設

2024-06-05

古河電工、光ファイバからの輝度で世界最高レベルとなる出力5kWの青色レーザ発振器を開発

2024-04-02

Blue-IRハイブリッドレーザ「BRACE®」シリーズが、第16回「レーザー学会産業賞」奨励賞を受賞しました

2024-03-06

アカデミー科学技術賞受賞特設ページを開設しました。

2024-01-17

アカデミー科学技術賞を受賞

2023-11-14

高出力赤色半導体レーザーの内製化及び製品販売開始

2023-10-04

脱水銀社会実現に向けた当社の取り組み：第八回プリント基板（PCB）の露光用途における水銀ランプの代替技術

2023-09-26

BRACE®シリーズのラインナップを強化

2023-06-26

脱水銀社会実現に向けた当社の取り組み：第五回プロジェクター用途における超高圧水銀ランプの代替技術

2021-04-26

日亜化学工業と古河電気工業、モビリティの電動化推進を支える基幹技術（レーザ加工）において業務提携

論文一覧

※掲載している文献は一部抜粋です。

タイトル	発表年	掲載誌
高出力青色/緑色半導体レーザーの最新技術動向	2021	レーザー研究, 49巻8号, 456-460頁
GaN系半導体青色レーザ光源	2018	レーザ加工学会誌, 25巻3号, 145-148頁
GaN系半導体レーザーの高出力化と長波長化への道程	2013	レーザー研究, 41巻11号, 899-904頁
510-515 nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate	2009	Applied Physics Express, 2, 062201
GaN-Based High-Output-Power Blue Laser Diodes	2008	電気学会論文誌. C, 電子・情報・システム部門誌, 128巻 5号, 744-747頁
GaN-based High-Output-Power Blue Laser Diodes for Display Applications	2007	Journal of the Society for Information Display, 15(2), 157-160
First-order AlInGaN 405 nm Distributed Feedback Laser Diodes by Current Injection	2006	Japanese Journal of Applied Physics, 45, L749-L751
CW Operation of the First-Order AlInGaN 405 nm Distributed Feedback Laser Diodes	2006	Japanese Journal of Applied Physics, 45, L1223-L1225
窒化物半導体レーザの発振波長の拡張	2005	電気学会論文誌. C, 電子・情報・システム部門誌, 125巻 2号, 169-172頁
365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy	2003	Japanese Journal of Applied Physics, 42, L1318-L1320
High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates	2000	Japanese Journal of Applied Physics, 39(7A), L647-L650

高出力青色/緑色半導体レーザーの最新技術動向

著者	Eiichiro Okahisa, Shingo Masui, Tomoya Yanamoto, Shin-ichi Nagahama
掲載誌	レーザー研究, 49巻8号, 456-460頁
発表年	2021
要旨	GaN-based blue and green laser diodes (LDs) have already been widely adopted in light sources for laser display systems. The authors explain the status of the development for blue and green LDs and discloses new high-power blue and green LDs based on a c-plane GaN substrate which Nichia has recently fabricated. The optical output power and wall-plug efficiency of blue LDs with an operating current of 3.0 A was 5.67 W and 48.1%, respectively. Additionally, this paper introduces some LD packages that incorporate the recently developed blue/green LDs and those packages are used for the light sources of laser projectors, digital cinema, laser head lights, etc.

GaN系半導体青色レーザ光源

著者	Shingo Masui, Eiichiro Okahisa, Tomoya Yanamoto, Shin-ichi Nagahama
掲載誌	レーザ加工学会誌, 25巻3号, 145-148頁
発表年	2018

GaN系半導体レーザーの高出力化と長波長化への道程

著者	Shingo Masui, Shin-ichi Nagahama
掲載誌	レーザー研究, 41巻11号, 899-904頁
発表年	2013
要旨	AlInGaN is most attractive material due to a directive semiconductor materials covering wide band energy ranging 0.8-6.4 eV. AlInGaN based violet semiconductor laser diodes (LD) is fi rst demonstrated by Nichia Corporation in 1995. Since it, AlInGaN based LDs device characteristics have been improving and its lasing wavelength are expand from UV, blue, to green. In this paper, the technology histories of higher power and longer wavelength GaN based LDs are reviewed. Also, recent high optical power watt class blue and green LDs characteristics are introduced.

510-515 nm InGaN-Based Green Laser Diodes on c-Plane GaN Substrate

著者	Takashi Miyoshi, Shingo Masui, Takeshi Okada, Tomoya Yanamoto, Tokuya Kozaki, Shin-ichi Nagahama, Takashi Mukai
掲載誌	Applied Physics Express, 2, 062201
発表年	2009
要旨	We succeeded in developing InGaN-based green laser diodes (LDs) with a wavelength of 515 nm under continuous-wave (cw) operation by improving the growth condition of epitaxial layers and structures of LDs. The LD structures were grown on conventional c-plane free-standing GaN substrates by metal organic chemical vapor deposition (MOCVD). The threshold current and threshold voltage at 515 nm were 53 mA and 5.2 V, respectively. The lifetime of 510–513 nm LDs was estimated to be over 5000 h under cw operation with an optical output power of 5 mW at 25 °C.

GaN-Based High-Output-Power Blue Laser Diodes

著者	Takashi Miyoshi, Tokuya Kozaki, Tomoya Yanamoto, Yasushi Fujimura, Shin-ichi Nagahama, Takashi Mukai
掲載誌	電気学会論文誌. C, 電子・情報・システム部門誌, 128巻 5号, 744-747頁
発表年	2008
要旨	We succeeded fabricating high-output-power blue (445nm) laser diodes (LDs) with an output power of 500mW. The operating current, voltage, wall-plug efficiency of these LDs were 480mA, 4.8V, and 21.7%. Estimated lifetime of these LDs was over 30,000 hours under continuous wave operation at 25°C.

GaN-based High-Output-Power Blue Laser Diodes for Display Applications

著者	Takashi Miyoshi, Tokuya Kozaki, Tomoya Yanamoto, Yasushi Fujimura, Shin-ichi Nagahama, Takashi Mukai
掲載誌	Journal of the Society for Information Display, 15(2), 157-160
発表年	2007
要旨	We succeeded in fabricating high-output-power blue (445 nm) laser diodes (LDs) with an output power of 500 mW. The operating current, voltage, and wall-plug efficiency of these LDs were 480 mA, 4.8 V, and 21.7%, respectively. The lifetime of these LDs was estimated to be 10,000 hours under continuous-wave operation at 25°C. From examination of the degradation mode, we found that the operating current seriously affects the lifetime of LDs. In the next stage, we will focuse on the optimization and sophistication of the manufacturing processes to fabricate longer-lifetime (>30,000 hours) blue LDs.

First-order AlInGaN 405 nm Distributed Feedback Laser Diodes by Current Injection

著者	Shingo Masui, Kazutaka Tsukayama, Tomoya Yanamoto, Tokuya Kozaki, Shin-ichi Nagahama, Takashi Mukai
掲載誌	Japanese Journal of Applied Physics, 45, L749-L751
発表年	2006
要旨	The first-oreder AlInGaN 405 nm distributed feed-back (DFB) laser diodes were grown on the c-face sapphire substrates by a metalorganic chemical vapor deposition method. The diffractive grating, which was shaped by 108 nm deep grating of an 85.7 nm period with a sidewall angle 89°, was formed into a p-type waveguiding layer. As a result, we succeeded in demonstrating the first-order AlInGaN based 405 nm DFB laser diodes by pulsed current injection. The threshold current and the peak lasing wavelength of the DFB laser diode were 190 mA and 403.7 nm under pulsed current operation at 25 °C, respectively. The lasing spectrum was kept the single longitudinal mode emission up to an output power of 30 mW.

CW Operation of the First-Order AlInGaN 405 nm Distributed Feedback Laser Diodes

著者	Shingo Masui, Kazutaka Tsukayama, Tomoya Yanamoto, Tokuya Kozaki, Shin-ichi Nagahama, Takashi Mukai
掲載誌	Japanese Journal of Applied Physics, 45, L1223-L1225
発表年	2006
要旨	The first-order AlInGaN 405 nm distributed feed-back (DFB) laser diodes were grown on the free-standing GaN substrates by a metal organic chemical vapor deposition method. The first-order diffractive grating was formed into an n-type cladding layer. As a result, we succeeded in demonstrating the first-order AlInGaN based 405 nm DFB laser diodes under cw operation. The threshold current and the slope efficiency were 22 mA and 1.44 W/A under cw operation at 25 °C, respectively. The single longitudinal mode emission was maintained up to an output power of 60 mW. The fundamental transverse mode operation with a single longitudinal mode was observed in the temperature range from 15 to 85 °C at an output power of 20 mW.

窒化物半導体レーザの発振波長の拡張

著者	Shin-ichi Nagahama, Tokuya Kozaki, Tomoya Yanamoto, Takashi Mukai
掲載誌	電気学会論文誌. C, 電子・情報・システム部門誌, 125巻 2号, 169-172頁
発表年	2005
要旨	Starting with next generation high density optical disc, commercial use of GaN based violet laser diodes (LD) has been adopted in many new fields, such as bio-medical, reprographic, exposure and etc. Recently, the lasing wavelength has broadened to cover from ultraviolet (UV) to blue-green region, which enabled other new applications. In this paper, current status of GaN based LDs in UV to Blue-green region are reported and next target is discussed.

365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy

著者	Shingo Masui, Yuji Matsuyama, Tomoya Yanamoto, Tokuya Kozaki, Shin-ichi Nagahama, Takashi Mukai
掲載誌	Japanese Journal of Applied Physics, 42, L1318-L1320
発表年	2003
要旨	Ultraviolet (UV) laser diodes (LDs), whose active layer were quaternary AlxInyGa1-x-yN single-quantum well structure, were grown on epitaxial lateral overgrown GaN substrates by a metalorganic chemical vapor deposition method. We investigated the lasing wavelength dependence of UV LDs on the threshold current density. As a result, we succeeded in fabricating 365 nm UV LDs which are useful for various industrial uses because their wavelength is similar to that of the i-line of high-pressure mercury vapor lamps. The threshold current and voltage of the 365 nm UV LD under continuous wave (cw) operation at 25°C were 50 mA and 4.8 V, respectively. The estimated lifetime of the 365 nm UV LDs was approximately 2000 h at an output power of 3 mW under cw operation at 30°C. The shortest lasing wavelength was achieved at 354.7 nm under pulse current injection at 25°C.

High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

著者	Shin-ichi Nagahama, Naruhito Iwasa, Masayuki Senoh, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku, Tokuya Kozaki, Masahiko Sano, Hiroaki Matsumura, Hitoshi Umemoto, Kazuyuki Chocho, Takashi Mukai
掲載誌	Japanese Journal of Applied Physics, 39(7A), L647-L650
発表年	2000
要旨	Epitaxially laterally overgrown GaN on free-standing GaN was used to reduce the threading dislocations which were widely scattered over the entire surface. The threading dislocation density of the GaN layer above the window area surrounding the SiO2 mask was reduced to 5×107/cm2, and that of the GaN layer above the SiO2 mask area was reduced to 7×105/cm2. InGaN multi-quantum-well laser diodes (LDs) grown on low-dislocation-density GaN substrates were demonstrated. LDs with an output power of 30 mW exhibited an estimated lifetime of 15,000 h at a case temperature of 60°C. At a case temperature of 25°C, the current at the output power of 30 mW and at the lasing threshold current were 42 mA and 23 mA, respectively. For comparison, LDs were grown on different substrates, and the dependence of their characteristics on the substrates was examined.

学会発表一覧

※掲載している文献は一部抜粋です。

タイトル	発表年	学会
RGB QuaLas® (multichip package) for various applications	2026	SPIE LASE
High Power GaN-based Laser Diodes	2026	OPTICS & PHOTONICS International Congress
Exceeding 3 kW high-power and high-brightness blue laser light source for laser processing using wavelength beam combining technology	2026	SPIE LASE
High-power GaN-based edge-emitting laser diodes	2025	SPIE OPTO
800W-class high-power blue laser diode module with GaN-based laser diodes	2025	SPIE LASE
Current development status of red high-power laser diodes for display applications at Nichia	2025	SPIE LASE
Blue and Green Laser Diodes for Cinema Projectors	2025	Laser Display and Lighting Conference
kW-class High-power and High-brightness Blue Laser for Laser Processing using Wavelength Beam Combining Technology	2025	The 9th International Congress on Laser Advanced Materials Processing(LAMP)
Development of highly efficient blue and green edge-emitting laser diodes	2024	SPIE OPTO
High-power and high-luminance blue laser module using GaN-based laser diodes	2024	SPIE LASE
World highest wall plug efficiency 638-nm red high-power broad area laser diode	2024	SPIE LASE
Recent Progress of Green and Blue GaN-based Vertical-Cavity Surface-Emitting Lasers	2023	OPTICS & PHOTONICS International Congress
Edge-emitting blue laser diode with high CW wall-plug efficiency of 50 %	2022	SPIE OPTO
GaN-Based Watt-Class High-Power Edge-Emitting Lasers and Milliwatt-Class Vertical-Cavity Surface-Emitting Lasers	2022	SID Display Week
Blue and green InGaN semiconductor lasers as light sources for displays	2020	SPIE OPTO
High-efficiency blue and green laser diodes for laser displays	2019	SPIE OPTO
Recent Improvement in Nitride Lasers	2017	SPIE OPTO
Three Primary Color LD Module	2017	SID Display Week
High Power Blue and Green AlInGaN Laser Diodes	2016	IWN
Watt-level Green/Blue Laser Diodes	2015	OPTICS & PHOTONICS International Congress
1 W AlInGaN based Green Laser Diodes	2013	2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR)
Tunable light source with GaN-based violet laser diode	2013	SPIE OPTO
Characterization of AlInGaN-based 405 nm Distributed Feedback Laser Diodes	2008	SPIE OPTO
Recent Progress of High-Power GaN-Based Laser Diodes	2007	SPIE OPTO
High-Power and Wide Wavelength Range GaN-Based Laser Diodes	2006	SPIE OPTO
GaN-based Violet Laser Diodes	2001	SPIE OPTO

RGB QuaLas® (multichip package) for various applications

著者	Takuya Ozaki, Tatsuya Kanazawa, Kazuma Kozuru, Tadayuki Kitajima, Ryuichi Sogabe, Tomoya Yanamoto, Shingo Masui, Takashi Miyoshi, Masanao Ochiai, Tetsuya Yagi, Shin-ichi Nagahama
学会	SPIE LASE
発表年	2026
要旨	We have developed an original multi-chip package, QuaLas®, which integrates multiple laser diode (LD) chips within a single module and incorporates collimation lenses. This configuration offers a lot of advantages such as a reduced footprint per unit of optical output power and simpler assembly processes. QuaLas® enables flexible LD chip arrangement, supporting output powers from 30 to 60 W for blue LDs and facilitating RGB mixed-color output. The collimation lenses are precisely aligned to facilitate efficient fiber coupling. Owing to these characteristics, the package is well suited for a wide range of applications, such as display technology, lighting, bio-medical, and industrial uses.

High Power GaN-based Laser Diodes

著者	Yoshitaka Nakatsu, Ryotaro Konishi, Katsuhiro Kishimoto, Tsuyoshi Hirao, Yoji Nagao, Tomoya Yanamoto, Shin-ichi Nagahama
学会	OPTICS & PHOTONICS International Congress
発表年	2026

Exceeding 3 kW high-power and high-brightness blue laser light source for laser processing using wavelength beam combining technology

著者	Norihiro Dejima, Kazuya Hatakeyama, Yoshio Okamoto, Yasuo Tanahashi, Yuto Okia, Takuya Tsujimoto, Nao Senga, Yoshihiro Kimura, Ryohei Hirose, Yojiro Ichiraku, Tsutomu Yamada, Kaname Saito, Masaki Omori
学会	SPIE LASE
発表年	2026
要旨	In this study, we report the development of a high-power, high-brightness blue laser light source using narrow-spectral-width laser technology and Wavelength Beam Combining (WBC) technology. The Distributed Bragg Reflector laser diode (DBR-LD) we developed has a spectral width of less than 0.2 nm and an output power exceeding 20 W. The output power of a DBR-LD module, which incorporates multiple wavelength-controlled DBR-LDs, reached more than 500 W. By wavelength beam combining sixteen such DBR-LD modules, an output power exceeding 6.0 kW was achieved from an optical fiber with a 150 μm core diameter. The resulting brightness is 34 MW/cm2. Owing to its simultaneous high power and high brightness, the proposed blue laser light source is a promising candidate for industrial metal processing. Cutting experiments confirmed the ability to cut copper plates up to 7 mm thick.

High-power GaN-based edge-emitting laser diodes

著者	Ryotaro Konishi, Yoji Nagao, Tsuyoshi Hirao, Katsuhiro Kishimoto, Teruyuki Morito, Tomonori Morizumi, Yoshitaka Nakatsu, Tomoya Yanamoto, Shin-ichi Nagahama
学会	SPIE OPTO
発表年	2025
要旨	This report describes the latest developments in gallium nitride (GaN)-based edge-emitting laser diodes (LDs). We have been engaged in the development of blue LDs for display applications for many years. The epitaxial layers of the LDs were grown on c-plane free-standing GaN substrates by metal organic chemical vapor deposition (MOCVD), and a ridge type structure was formed at the top of the p-type layers. The fabricated LDs were mounted on a heatsink using a junction-down method in a TO-9 (ø9mm) package. We optimized the epitaxial layers and device structure, which led to an improvement of the optical output power and wall-plug efficiency (WPE) of the LDs. The WPE of the blue LD reached 53.2%, with an optical output power of 7.11W at a current of 3.5A under continuous-wave (CW) operation. This WPE is the highest reported for blue LDs to date. Additionally, we have been developing blue LDs for processing applications. Improving optical output power significantly is essential for applications such as copper welding and cutting. The cavity lengths and the ridge width of the LDs were modified, and by implementing these changes in a low thermal resistance package, we successfully increased the optical output power significantly. The WPE of the blue LD developed for copper processing reached 41.6%, with an optical output power of 26.8W at a current of 16.5A under CW operation. This is the highest optical output power from a single LD chip to our knowledge.

800W-class high-power blue laser diode module with GaN-based laser diodes

著者	Yuki Tsuboi1, Ryotaro Konishi1, Naoto Morizumi1, Masahiro Nitta1, Ryota Okuno1, Satoshi Shibuya2, Ayato Okada2, Yasumasa Kawakita2 1. NICHIA CORPORATION 2. Furukawa Electric Co., Ltd.
学会	SPIE LASE
発表年	2025
要旨	Mobility electrification has been increasing the use of copper in motors, batteries, and other key electric components. This has led to an increased demand for copper processing. Copper has a high optical absorption coefficient in the blue wavelength range. Therefore, a blue laser is a promising candidate as a light source for copper processing due to its high energy efficiency. We have been developing high-power blue laser diode (LD) modules. This module is a fiber-coupled direct diode laser using the techniques of spatial combining and polarization beam combining. We previously reported on the development of an LD module which achieved an output power of over 500W from an optical fiber with a 110μm core diameter. An increase in the number of installed LDs and the output power of each LD helped achieve this high optical output power. To realize high-quality and high-efficiency copper processing and expand the applications of blue laser processing, we have been continuously making progress in the development of high-power blue LD modules. In this paper, we have made further design improvements of both the LDs and the LD module to increase the output power of the LD module. As a result, we have achieved an output power of more than 800W at a 110μm core size. This developed LD module has a brightness of more than 8.4MW/cm2 and a BPP of 8.8mm-mrad.

Current development status of red high-power laser diodes for display applications at Nichia

著者	Ryuichi Sogabe, Takuya Kuchimura, Yusuke Aoki, Takeshi Mori, Hisashi Kasai, Daisuke Morita, Masanao Ochiai, Tetsuya Yagi
学会	SPIE LASE
発表年	2025
要旨	Laser-based displays such as cinema to pico projectors have attracted much attention because of their wide color gamut, low power consumption, 3D expression and so on. These displays use blue, green and red laser diodes (LDs) as light sources. In the three-color LDs, the red LDs suffer from high temperature sensitivity compared to the other color GaN-based LDs because the AlInGaP/GaAs material system has a small band discontinuity between the active and the p-cladding layers in the conduction band (ΔEc). This results in relatively low wall plug efficiency (W.P.E.). At the last Photonics West, we reported the world highest W.P.E. of 44.9% under CW and 25℃ using dual stripe geometry with each stripe 60μm width. The LD lased at 639nm, typical wavelength of red LDs for the display applications. The W.P.E. dependence on the injection current of the LD gradually decreased just after the peak, and this droop tendency increased as the current increased, indicating the narrow stripe geometry is not suitable for higher power operation. To achieve higher power operation and W.P.E. of red LDs, we focused on lowering the junction temperature of the active layer (Tj) of red LDs. There are several methods to reduce the Tj of the LD. For example, reduction of the threshold current (Ith) and thermal resistance (Rth), improvement of the slope efficiency (SE) and so on. The newly designed red LD shows the peak W.P.E. of 45.8% under CW 25℃. The LD chip has the same cavity length, facet refractivity and chip width such as the last year. The W.P.E. is the world highest record to the best of our knowledge.

Blue and Green Laser Diodes for Cinema Projectors

著者	Yoshitaka Nakatsu, Yoji Nagao, Tsuyoshi Hirao, Tomonori Morizumi, Kazuma Kozuru, Katsuhiro Kishimoto, Shintaro Harada, Teruyuki Morito, Tomoya Yanamoto, Shin-ichi Nagahama
学会	Laser Display and Lighting Conference
発表年	2025
要旨	This paper reports the latest device performance of high-power blue and green edge-emitting laser diodes (LDs) for cinema projectors. The Gallium Nitrides based epitaxial layers of LDs were grown by metal organic chemical vapor deposition (MOCVD). Fabricated every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package. We optimized the epitaxial and the device structures for high efficiency and high optical output power. A new developed 465 nm blue LD showed the optical output power, the voltage and the wall-plug efficiency (WPE) of 6.57 W, 3.86 V and 48.7% at the forward current of 3.5 A under continuous wave (CW) operation. The peak WPE of the 465 nm LD was 50.0 % at the forward current of 2.3 A. And our developed 525 nm green LD showed the optical output power, the voltage and the WPE of 1.97 W, 4.12 V and 25.2 % at the forward current of 1.9 A under CW operation. The peak WPE of the 525 nm LD was 26.4 % at the forward current of 1.2 A.

kW-class High-power and High-brightness Blue Laser for Laser Processing using Wavelength Beam Combining Technology

著者	Kazuya Hatakeyama, Norihiro Dejima, Yoshio Okamoto, Yasuo Tanahashi, Takuya Tsujimoto, Yoshihiro Kimura, Ryohei Hirose, Yojiro Ichiraku, Tsutomu Yamada, Kaname Saito, Masaki Omori
学会	The 9th International Congress on Laser Advanced Materials Processing(LAMP)
発表年	2025

Development of highly efficient blue and green edge-emitting laser diodes

著者	Katsuhiro Kishimoto, Tsuyoshi Hirao, Tomonori Morizumi, Yoji Nagao, Yoshitaka Nakatsu, Tomoya Yanamoto, Shin-ichi Nagahama
学会	SPIE OPTO
発表年	2024
要旨	This report shows the latest developments of Gallium nitride (GaN)-based blue (455nm) and green (525nm) edge-emitting laser diodes (LDs). The epitaxial layers were grown on c-plane free-standing GaN substrates by metal-organic chemical vapor deposition (MOCVD), and a ridge-type structure for refractive-index waveguide was fabricated. Each LD chip was mounted on a heat sink in a TO-Φ9 mm CAN package by a junction down method for improving thermal dissipation. Optimization of epitaxial layers and device structures has led to improve the wall-plug efficiency (WPE) of LDs. The WPE and the optical output power of the blue LD have reached to 52.4% and 5.99 W at the current of 3.0 A under continuous wave (CW) operation, respectively. We also confirmed that the WPE and the optical output power of the green LD were 24.2 % and 1.90 W at the CW current of 1.9 A, respectively. Each WPE is the highest value ever reported of blue and green LDs. On top of this, the lifetime tests of both LDs over 1000 hours indicate the long lifetime more than 30,000 hours defined by the time when an optical output power is expected to be lower than the half of initial value.

High-power and high-luminance blue laser module using GaN-based laser diodes

著者	Kazuya Hatakeyama1, Yasuo Tanahashi1, Ryotaro Konishi1, Masatoshi Nakagaki1, Ryota Okuno1, Takafumi Sugiyama1, Satoshi Shibuya2, Ayato Okada2, Naoki Hayamizu2 1. NICHIA CORPORATION 2. Furukawa Electric Co., Ltd.
学会	SPIE LASE
発表年	2024
要旨	Blue lasers are promising light source candidates for laser metal processing such as copper welding and heating, because copper has a high optical absorption coefficient in the blue spectral region. We have jointly developed 250 W blue Laser Diode (LD) modules including multiple LD chips with Furukawa Electric Co., Ltd. Their hybrid laser system consisting of an infrared fiber laser and the blue LD modules has already been commercialized. In this study, we report on the development progress for higher optical output power of the blue LD module used in the hybrid laser system. Specifically, we have achieved the output power for the LD module over 500 W from the fiber with a 110µm core diameter by increasing the output power of the constituent blue LD chip from 13 W to 16 W and the number of the installed LDs from 24 pcs to 36 pcs. The luminance is more than 5 MW/cm2 and the Beam Point Parameter (BPP) is almost 9 mm-mrad.

World highest wall plug efficiency 638-nm red high-power broad area laser diode

著者	T. Kuchimura, D. Morita, S. Tanisaka, S. Nagahara, Y. Aoki, T. Mori, H. Kawamura, M. Ochiai, T. Yagi
学会	SPIE LASE
発表年	2024
要旨	Laser displays require red, green, and blue Broad Area Laser Diodes (BA-LDs) for their light sources. The requirements for the LDs are high output with high wall plug efficiency (W.P.E.) Blue and green LDs consist of AlInGaN/GaN. The former has been reported with W.P.E. above 50%. The latter has low one around 24%, but the luminosity of the green light is quite high compared to blue and red, so the W.P.E doesn’t become a big problem so far. The red color shows lower luminosity as the wavelength gets longer. Therefore, short wavelengths such as 638 nm are chosen for red LD for the display. The highest one of 42% at CW operation, 25°C, was reported by other two researchers so far in this wavelength BA-LDs. We developed the 638-nm BA-LD. The LD chip had a similar stripe geometry to the reported one with a cavity length of 1.5 mm and dual stripe geometry with a stripe width of 75 μm each. A window-mirror structure was also implemented, and the chip was mounted on a Φ9 TO-can in a junction-down configuration. As a result, the peak W.P.E of 42.3% was achieved, 0.3 points higher than the previous report. The power dissipation related to the threshold current accounts for a large part of the total dissipation. Each stripe width of 60 μm was chosen to reduce the threshold current, and the LD showed the world’s highest of 44.9% under this condition. This value was approximately 7% (2.9 points) higher than the reported value.

Recent Progress of Green and Blue GaN-based Vertical-Cavity Surface-Emitting Lasers

著者	Hitoshi Nagai, Kenichi Terao, Kazutaka Tsukayama, Takashi Ohara, Yoshihiro Hara, Ryoma Shimazu, Shingo Masui, Tomoya Yanamoto, Shin-ichi Nagahama
学会	OPTICS & PHOTONICS International Congress
発表年	2023

Edge-emitting blue laser diode with high CW wall-plug efficiency of 50 %

著者	Yoshitaka Nakatsu, Yoji Nagao, Tsuyoshi Hirao, Kazuma Kozuru, Tatsuya Kanazawa, Shingo Masui, Eiichiro Okahisa, Tomoya Yanamoto, Shin-ichi Nagahama
学会	SPIE OPTO
発表年	2022
要旨	This paper reports the latest device performance of high-power blue laser diodes (LDs). The epitaxial structures of LDs were grown by metal organic chemical vapor deposition (MOCVD) on C-plane free-standing GaN substrates. And a ridge type structure was formed at the top of p-type layers. The ridge width of the LD was 45 μm. Electrodes of the n-type and p-type were formed at the substrate and the ridge respectively. And the front and rear sides were obtained by cleavage at the m-plane surface. These faces were covered by dielectric mirrors. Every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package for suppressing thermal resistance. We optimized the epitaxial and the device structures for high efficiency and high optical output power. A New developed 455 nm blue LD showed the optical output power and the voltage of 5.73 W and 3.82 V at the forward current of 3 A under Continuous Wave (CW) operation. The wall-plug efficiency (WPE) of the 455 nm blue LD was 50.0 % at 3 A. This is the highest WPE reported so far. The peak WPE of the 455 nm LD was 51.2 % at the forward current of 2 A.

GaN-Based Watt-Class High-Power Edge-Emitting Lasers and Milliwatt-Class Vertical-Cavity Surface-Emitting Lasers

著者	Takuya Ozaki, Eiichiro Okahisa, Shingo Masui, Tomoya Yanamoto, Shin-ichi Nagahama
学会	SID Display Week
発表年	2022
要旨	The latest achievements of GaN-based laser diodes are summarized, focused on two topics: watt-class high-power edge-emitting lasers and milliwatt-class vertical-cavity surface-emitting lasers. These light sources have high efficiency and high reliability, which are suitable for various display applications such as laser projectors and/or ARIVR displays.

Blue and green InGaN semiconductor lasers as light sources for displays

著者	Yoshitaka Nakatsu, Yoji Nagao, Tsuyoshi Hirao, Yoshihiro Hara, Shingo Masui, Tomoya Yanamoto, Shin-ichi Nagahama
学会	SPIE OPTO
発表年	2020
要旨	This paper reports the latest device performance of high-power blue and green Laser Diodes (LDs). The epitaxial structures of LDs including n-type, active and p-type layers were grown by metal organic chemical vapor deposition (MOCVD) on C-plane free-standing GaN substrates. And a ridge type structure and Electrodes of the n-type and p-type were formed. Front and rear mirror facets were obtained by cleavage at the m-plane surface. We optimized the epitaxial and the device structures for high efficiency, high optical output power and reliability. Every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package for suppressing thermal resistance. A New developed 455 nm blue LD showed the optical output power and the voltage of 5.67 W and 3.93 V at the forward current of 3 A under Continuous Wave (CW) operation. The wall plug efficiency of the 455 nm blue LD was 48.1% at 3A. The wall plug efficiency of the high-power blue LD we developed is the highest reported so far. A new developed green LD at 525 nm showed the optical output power of 1.75 W and the wall plug efficiency of 21.2 % at the forward current of 1.9A. The optical output power, the voltage and the wall plug efficiency of a new 532 nm LD showed 1.53 W and 4.35 V, 18.5 % at the forward current of 1.9 A under CW operation. The peak wall plug efficiency of the 532 nm LD was 20 % at the optical output power of 1W.

High-efficiency blue and green laser diodes for laser displays

著者	Yoshitaka Nakatsu, Yoji Nagao, Tsuyoshi Hirao, Shingo Masui, Tomoya Yanamoto, Shin-ichi Nagahama
学会	SPIE OPTO
発表年	2019
要旨	We present latest development results of GaN based high power blue and green Laser Diodes (LDs). The epitaxial structures of LDs including n-type, active and p-type layers were grown by metal organic chemical vapor deposition (MOCVD) on C-plane free-standing GaN substrates. And a ridge type structure and Electrodes of the n-type and p-type were formed. Front and rear mirror facets were obtained by cleavage at the m-plane surface. We optimized the epitaxial and the device structures for high efficiency, high optical output power and reliability. Every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package for suppressing thermal resistance. A New developed blue LD showed the optical output power and the voltage of 5.25 W and 4.03 V at the forward current of 3 A under Continuous Wave (CW) operation. The wall plug efficiency of the blue LD was 43.4% at 3A. And pure green LDs at 532 nm showed the optical output power of 1.19 W and the wall plug efficiency of 17.1 % at the forward current of 1.6A. Furthermore, 543 nm green LDs were fabricated on C-plane GaN substrates.

Recent Improvement in Nitride Lasers

著者	Shingo Masui, Yoshitaka Nakatsu, Daiji Kasahara, Shin-ichi Nagahama
学会	SPIE OPTO
発表年	2017
要旨	We report our recent improvement of watt class blue and green GaN based LDs. These LDs were grown on c-face GaN substrates by metal organic chemical deposition. The laser chip was mounted on the heat sink by the junction down method in TO-ø9 mm package for the suppression of the thermal resistance. The optical output power of 455nm blue LDs was obtained above 4.7 W at injection current of 3A. The average lifetime was estimated to be over 30,000 hours at case temperature of 65 degree C under 3A. In green LDs, 1 watt class 532 nm green LDs as same wavelength as second harmonic generation (SHG) green laser was developed and the wall plug efficiency was 12.1 %. And the longer lasing wavelength was achieved to 537 nm.

Three Primary Color LD Module

著者	Seiji Nagahara
学会	SID Display Week
発表年	2017

High Power Blue and Green AlInGaN Laser Diodes

著者	Shingo Masui, Yoshitaka Nakatsu, Daiji Kasahara, Shin-ichi Nagahama
学会	IWN
発表年	2016

Watt-level Green/Blue Laser Diodes

著者	Shingo Masui
学会	OPTICS & PHOTONICS International Congress
発表年	2015

1 W AlInGaN based Green Laser Diodes

著者	Shingo Masui, Takashi Miyoshi, Tomoya Yanamoto, Shin-ichi Nagahama
学会	2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR)
発表年	2013
要旨	The AlInGaN based green laser diodes were grown on c face GaN substrates by a metal organic chemical vapor deposition method. As a result, we succeeded in demonstrating 1W 525 nm Green LDs. The optical output power, voltage and the wall-plug efficiency at the forward current of cw 1.5 A were 1.01 W, 4.76 V and 14.1% at 25°C, respectively. The lifetime was estimated to be over 15,000 h by the lifetime test which was carried out under the condition of a constant current of 1.5 A at 50°C for 1000 h.

Tunable light source with GaN-based violet laser diode

著者	Masaki Omori, Naoki Mori, Norihiro Dejima
学会	SPIE OPTO
発表年	2013
要旨	GaN based violet Laser Diode has been applying for the industrial market with unique high potential characters. It has possibility Replacing Gas lasers, Dye Lasers, SHG lasers and Solid-state Lasers and more. Diode based laser extreme small and low costs at the high volume range. In addition GaN Laser has high quality with long lifetime and has possibility to cover the wide wavelength range as between 375 to 520nm. However, in general, diode based laser could only lase with Longitudinal Multi Mode. Therefore applicable application field should be limited and it was difficult to apply for the analysis. Recently, Single Longitudinal Mode laser with GaN diode has also be accomplished with external cavity by Nichia Corporation. External cavity laser achieved at least much higher than 20dB SMSR. The feature of installing laser is that Laser on the front facet with AR coating to avoid chip mode lasing. In general, external cavity laser has been required precision of mechanical assembly and Retention Capability. Nichia has gotten rid of the issue with Intelligence Cavity and YAG Laser welding assembly technique. This laser has also been installed unique feature that the longitudinal mode could be maintained to Single Mode lasing with installing internal functional sensors in the tunable laser.1,2 This tunable laser source could lock a particular wavelength optionally between 390 to 465nm wavelength range. As the results, researcher will have benefit own study and it will be generated new market with the laser in the near future.

Characterization of AlInGaN-based 405 nm Distributed Feedback Laser Diodes

著者	Shingo Masui, Kazutaka Tsukayama, Tomoya Yanamoto, Tokuya Kozaki, Shin-ichi Nagahama, Takashi Mukai
学会	SPIE OPTO
発表年	2008
要旨	The first-order AlInGaN 405 nm distributed feed-back (DFB) laser diodes were grown on the low dislocation freestanding GaN substrates by a metal organic chemical vapor deposition method. The first-order diffractive grating whose period was 80 nm was formed into an n-type cladding layer. The fine tooth shape grating was obtained by the EB lithography and the dry etching. No additional threading dislocation could be found at the regrowth interface. As a result, we succeeded in demonstrating the first-order AlInGaN based 405 nm DFB laser diodes under cw operation. The threshold current and the slope efficiency were 22 mA and 1.44 W/A under continuous wave operation at 25 °C, respectively. The single longitudinal mode emission was maintained up to an output power of 60 mW. The fundamental transverse mode operation with a single longitudinal mode was observed in the temperature range from 15 °C to 85 °C at an output power of 30 mW. The lifetime was estimated to be 4000 h by the lifetime test which was carried out under the condition of a constant output power of 30mW at 25 °C for 1000 h. The single longitudinal mode emission was maintained for the life tested DFB laser diodes.

Recent Progress of High-Power GaN-Based Laser Diodes

著者	Tokuya Kozaki, Shin-ichi Nagahama, Takashi Mukai
学会	SPIE OPTO
発表年	2007
要旨	High-power pure blue laser diodes (LDs) are expected to be adopted to the light sources for full color laser display systems. We have succeeded in fabricating high-power blue (445nm) LDs with an output power of 500mW. The typical operating current, voltage and wall-plug efficiency of these LDs were 480mW, 4.8V and 21.7%, respectively. The lifetime of these LDs was estimated to be over 10,000 hours under continuous-wave operation. Moreover, we succeeded in fabricating the high-luminance white light source by combining the high-power blue LD, optical fiber, and phosphor. In this paper, we report recent progress and future prospects of the high-power GaN-based blue LDs and the new concept of high-luminance white light source.

High-Power and Wide Wavelength Range GaN-Based Laser Diodes

著者	Tokuya Kozaki, Hiroaki Matsumura, Yasunobu Sugimoto, Shin-ichi Nagahama, Takashi Mukai
学会	SPIE OPTO
発表年	2006
要旨	Since the first demonstration of a pulsed InGaN laser diodes (LDs) grown on sapphire substrate in 1995, we have been developing longer lifetime and higher optical output power LDs in the 400 - 410 nm wavelength range. Moreover, we have already succeeded in the expansion of the lasing wavelength range from ultraviolet (UV) to blue-green. In this paper, we reported the recent progress of high-power and wide wavelength range GaN-based LDs with an optical output power of 20 mW single mode (375nm), 160 mW single mode (405nm), 200 mW multi mode (405nm), 50 mW single mode (445nm), 300 mW multi mode (445nm), and 20 mW single mode (473nm).

GaN-based Violet Laser Diodes

著者	Shinichi Nagahama et al.
学会	SPIE OPTO
発表年	2001
要旨	Three kinds of substrates were used for violet InGaN multi- quantum-well/GaN/AlGaN separate-confinement-heterostructure laser diodes (LDs). One of substrates is epitaxially laterally overgrown GaN (ELOG) substrate. Another is 'free- standing GaN' substrate. In order to obtain it, thick GaN was grown on 'ELOG', and then, sapphire and 'ELOG' were removed. Third one is 'ELOG grown on thick GaN' substrate. The threading dislocation densities of 'ELOG', 'free- standing GaN' and 'ELOG grown on thick GaN' were 1 X 106/cm2, 5 X 107/cm2 and 7 X 105/cm2, respectively. LDs were fabricated with the structure of epi side up. The estimated lifetime of LD grown on 'ELOG grown on thick GaN' was 15000 h under condition of continuous-wave operation, case temperature of 60 degree(s)C and output power of 30 mW.

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アカデミー科学技術賞

2024年度　第16回レーザー学会産業賞奨励賞
2020年度　第12回レーザー学会産業賞優秀賞
第2回レーザー学会産業賞優秀賞（半導体レーザーダイオード）
応用物理学会優秀論文賞（青色、緑色 VCSELの室温駆動）
第25回　櫻井健二郎氏記念賞（緑色域から紫外域のGaN系半導体レーザ室温連続発振）
応用物理学会JJAP論文賞（青色レーザーダイオード）
応用物理学会賞 The Japan Society of Applied Physics Award (レーザーダイオード)
日経BP社電子部門技術賞（GaN系青紫色半導体レーザの室温連続発振）
電気化学学会蛍光体同学会賞（青紫色窒化物系半導体レーザー）

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